快中子辐照直拉硅中V_2的FTIR研究  

FTIR Sudy on V_2 Defect in Fast Neutron Irradiated CZSi

作　　者：辛少波[1] 梁小平[1] 徐学文[2] 王小会[1] 

机构地区：[1]天津工业大学改性与功能纤维天津市重点实验室,天津300160 [2]河北工业大学材料学院,天津300130

出　　处：《硅酸盐通报》2006年第5期155-157,共3页Bulletin of the Chinese Ceramic Society

摘　　要：通过傅立叶红外光谱仪(FTIR)技术研究了由快中子辐照直拉硅中引入的辐照缺陷——双空位(V2)退火行为,主要研究了不同中子辐照剂量对双空位的影响。实验结果表明随辐照剂量的增加双空位缺陷的浓度并不会无限地增加;间隙氧原子很容易与双空位缺陷结合形成比较稳定的空位-氧复合体,当退火温度超过200℃,双空位吸收峰消失。The annealing behavior of V2 in CZSi introduced by fast neutron irradiation was investigated by Flourier infrared spectrometric analyzer （ FTIR）, and the effect of the dose of the fast neutron irradiation on the formation of V2 was also studied in detail. The results show that the intensity of V2 is not infinitely increased with the increasing of the neutron dose. In CZSi, V20 is formed by V2 capturing Oi, and finally V2 is vanished at 200℃.

关 键 词：直拉硅 快中子辐照 退火 双空位 

分 类 号：TN304.12[电子电信—物理电子学]