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作 者:王文静[1] 袁慧敏[1] 姜山[1] 萧淑琴[1] 颜世申[1]
出 处:《物理学报》2006年第11期6108-6112,共5页Acta Physica Sinica
基 金:国家自然科学基金(批准号:10234010);973项目(批准号:2001CB610603)资助的课题.~~
摘 要:用射频溅射法制备了Fe71.5Cu1Cr2.5V4Si12B9单层膜和结构为(F/S)3/M/(F/S)3的多层膜,在制备过程中加72kA/m的纵向磁场.研究表明在制备过程中加磁场明显改善了材料的软磁性能,降低了材料的矫顽力.将样品经不同温度退火热处理后,发现经230℃退火1.5h的单层膜和多层膜具有最佳的软磁性能和最大的磁阻抗效应,单层膜最大横向磁阻抗比为37.5%,多层膜最大横向磁阻抗比高达277%.通过比较单层和多层膜磁阻抗效应随频率和磁场的变化,发现多层膜具有较低的磁阻抗效应的临界频率和峰值特征频率,和较大的磁阻抗变化率,而且有较低的横向磁阻抗效应的饱和场.Magnetic properties and giant magneto-impedance (GMI) effects of FeCuCrVSiB single layered and multilayered films with Ag as the central layer and SiO2 as the isolating layers, which were prepared by radio frequency sputtering without field and with a magnetic field about 72kA/m along the films length, are investigated. The hysteresis loops of single layered films show that the samples deposited with a magnetic field possess excellent soft magnetic properties and the coercive force is only about 64A/m. After annealing at an optimum temperature of 230℃ for 1.5h, the maximum GMI ratios of single layered films are 37.5% in transverse field at the frequency of 13MHz, and the maximum GMI ratios of multilayered films is 277% at the frequency of 8.6MHz. The frequency dependence of the magneto-impedance indicates that the GMI effect in multilayered films can be very large even at relatively low frequencies.
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