低能氮离子束辅助真空电弧沉积Zr-Cu-N薄膜的研究  

Investigation of Zr-Cu-N Film Prepared by VAD with Low-energy Nitrogen Ion Beam Enhanced Deposition

作　　者：吴健[1] 胡社军[1] 曾鹏[1] 谢光荣[1] 周泽[1] 

机构地区：[1]广东工业大学材料与能源学院,广州510006

出　　处：《材料导报》2006年第11期141-143,共3页Materials Reports

基　　金：国家自然科学基金资助项目(50271019);广东省教育厅自然科学研究项目(项目编号:020075)

摘　　要：利用等离子体辅助真空电弧沉积技术,在高速钢和单晶硅基体上制备Zr-Cu-N复合薄膜。采用X射线衍射仪(XRD)、扫描电镜(SEM)和超微显微硬度计研究了低能氮离子束流对Zr-Cu-N涂层结构、表面形貌和硬度的影响。结果表明:用低能氮离子束辅助真空电弧沉积Zr-Cu-N膜,ZrN结构在(111)晶面出现择优取向,并对Zr-Cu-N膜层有一定的强化作用,膜层表现出较高的显微硬度和转好的耐磨性能。Zr-Cu-N film is deposited on high speed steel and single crystal silicon slice by vacuum arc deposition. The influences of low energy nitrogen ion beam aid deposition on structure and morphology of Zr-Cu-N film is studied by XRD, SEM. The results show that bombarding Zr-Cu-N film with low energy ion beam, ZrN phase with （111） preferential orientation can be formed and then Zr-Cu-N film can be strengthened. The microhardness and wearresisting property of the film icrease.

关 键 词：离子束 真空电弧离子镀 Zr-Cu-N薄膜 

分 类 号：O484.1[理学—固体物理]