Passively mode-locked Nd：GdVO4 laser at 912nm  

作　　者：张弛 魏志义 张玲 张春雨 张治国 

机构地区：[1]Laboratory of Optical Physics, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China

出　　处：《Chinese Physics B》2006年第11期2606-2608,共3页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China （Grant Nos 60225005, 60308001, 60321003 and 60490280）.

摘　　要：This paper demonstrates the passively mode-locked Nd：GdVO4 laser operating on the ^4F3/2-^4I9/2 transition at 912 nm by using a semiconductor saturable-absorber mirror for passive mode locking, stable continuous wave modelocked 912nm laser was achieved with a repetition rate of 176 MHz. At the incident pump power of 17.7W, 22.6mW average output power of stable mode-locked laser was obtained with a slope efficiency of 0.3%.This paper demonstrates the passively mode-locked Nd：GdVO4 laser operating on the ^4F3/2-^4I9/2 transition at 912 nm by using a semiconductor saturable-absorber mirror for passive mode locking, stable continuous wave modelocked 912nm laser was achieved with a repetition rate of 176 MHz. At the incident pump power of 17.7W, 22.6mW average output power of stable mode-locked laser was obtained with a slope efficiency of 0.3%.

关 键 词：diode-pumped laser solid-state laser mode locking 

分 类 号：TN24[电子电信—物理电子学]