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机构地区:[1]Institute of Optoelectronic Engineering,Jinan University, Guangzhou 510632 [2]Fujian Institute of Research on the Structure of Matter,Chinese Academy of Sciences,Fuzhou 350002
出 处:《Chinese Optics Letters》2006年第11期649-651,共3页中国光学快报(英文版)
基 金:This work was supported by the Natural Science Foundation of China (No. 60278025).
摘 要:Free-running emerald laser pumped by 660-nm laser diode (LD) was reported. Free-running output power of 24 mW has been obtained with overall efficiency of 1.4% and slope efficiency of 11.9% when the LD incident power was 2.56 W. The laser threshold value of emerald crystal was estimated to be 0.7 W. OCIS codes: 140.3580, 140.3070.Free-running emerald laser pumped by 660-nm laser diode (LD) was reported. Free-running output power of 24 mW has been obtained with overall efficiency of 1.4% and slope efficiency of 11.9% when the LD incident power was 2.56 W. The laser threshold value of emerald crystal was estimated to be 0.7 W. OCIS codes: 140.3580, 140.3070.
关 键 词:Semiconductor lasers
分 类 号:TN312.8[电子电信—物理电子学]
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