超薄化芯片  

Ultra-thinning Dies

作　　者：王仲康[1] 

机构地区：[1]中国电子科技集团公司第四十五研究所,北京东燕郊101601

出　　处：《电子工业专用设备》2006年第11期13-18,共6页Equipment for Electronic Products Manufacturing

摘　　要：芯片的超薄化发展,正在逐步整合半导体材料加工设备及其相应工艺。简要概述了芯片超薄化发展之动态,并以超薄芯片的减薄加工为中心,综合研究了影响超薄芯片机械特性、表面质量的主要因素,讨论了超薄晶圆片的最新加工技术。With the development of wafer becoming thinner and thinner, the semiconductor material manufacturing equipment have gradually integrated. In this paper, we briefly demonstrate the trends of thinner chips around grinding process, discuss the latest processing technology of thinner wafer, by studying the main factor which influence mechanical characteristic and the quality of wafer surface.

关 键 词：超薄芯片 损伤层 粗糙度 总厚度误差(TTV) 芯片强度崩边 背面减薄 延性域. 

分 类 号：TN305.2[电子电信—物理电子学]