BIT/PLZT/BIT多层铁电薄膜的I-V特性研究  

I-V Characteristics of BIT/PLZT/BIT Multilayer Ferroelectric Films

作　　者：易图林[1] 张颖[1] 谢艳丁[1] 

机构地区：[1]空军雷达学院基础部,武汉430019

出　　处：《空军雷达学院学报》2006年第4期279-281,284,共4页Journal of Air Force Radar Academy

摘　　要：为了有效阻止锆钛酸铅镧(PLZT)与半导体界面发生反应和互扩散,根据锆钛酸铅镧和钛酸铋(BIT)各自的铁电性能,采用脉冲准分子激光淀积(PLD)方法制备了BIT/PLZT/BIT多层结构铁电薄膜,测量和分析了它的I-V特性曲线.结果表明,这种结构吸收了锆钛酸铅镧和钛酸铋的优点,提高了铁电薄膜的铁电性能,为进一步研究薄膜的存储特性提供了基础.In order to prevent reaction and mutual diffusion between PLZT-semiconductor interface, based on PLZT and BIT＇ s ferroelectric characteristics, the multilayer ferroelectric film was prepared by using pulsed excimer laser deposition. The I-V characteristics curve was measured and analyzed. The results show that this structural film has taken the advantage of PLZT and BIT, and thus its ferroelectric characteristics has been improved, which can provide the basis for further research of the storage characteristics of the film.

关 键 词：BIT/PLZT/B1T多层铁电薄膜 铁电性能 电流-电压特性 脉冲准分子激光沉积 

分 类 号：TM22[一般工业技术—材料科学与工程]