具有NPB:DPVBi掺杂层的有机白光器件的研究  

Research of White Organic Light-emitting Diodes with NPB:DPVBi-doped Layer

作　　者：宋瑞丽[1] 谭雨清[1] 陈淑芬[2] 张筱洁[1] 何玉敏[1] 刘鸿[1] 王晶[2] 宋吉彬 宋吉成 

机构地区：[1]东北电力学院(大学),吉林132012 [2]吉林大学,吉林长春130012 [3]中国石油吉林化工销售公司,吉林132002 [4]中油吉化股份有限公司炼油厂,吉林132022

出　　处：《光电子．激光》2006年第11期1330-1332,共3页Journal of Optoelectronics·Laser

摘　　要：制作了结构为ITO/NPB(50 nm)/NPB∶DPVBi(10∶1,30 nm)/Alq3(20 nm)/LiF(1 nm)/Al的有机白光器件。由于掺杂层NPB:DPVBi的引入,电子及空穴容易被DPVBi及NPB俘获,提高激子的复合,进一步提高蓝光的发光能力。发光区从Alq3的发光峰逐渐变为DPVBi的发光和NPB发光增强,从而发光峰值发生变化。该器件的最大亮度和效率分别为22 V时4 721 cd/m2和5 V时0.80 cd/A。We have fabricated white organic light-emitting diodes using 4,48-bis （2,28-diphenylvinyl）-I, 18-biphenyl as dopant with structure of indium-tin oxide （ITO）/4,4-bis[N -（1-naphthyl-1-）-N-phenyl-amino]-biphenyl （NPB（50 nm））/NPB. DPVBi（10 ： 1,20 nm）/ tris-（8-hydroxyquinoline） aluminum Alq3 （20 nm）/LiF（1 nm）/AI. The emission from DPVBi was attrtbuted to charge trapping from NPB. The emission region was transferred partly from AIq3 to DPVBi-doped NPB by introducing the dopant DPVBi which leads to the emis- sion of DPVBi and an enhanced emission from NPB. The maximum luminance and current efficiency were 4 721 cd/m^2 at 22 V and 0.80 cd/A at 5 V,respectively.

关 键 词：电致发光(EL) 亮度 效率 

分 类 号：TN383.1[电子电信—物理电子学]