掩埋隧道结VCSEL芯片小信号等效电路模型  

Small Signal Equivalent Circuit Model of Buried Tunnel Junction VCSEL Chips

作　　者：徐桂芝[1] Hofmann W 黄亨沛[1] 张韬[1] 谢亮[1] 祝宁华[1] Amann M C 

机构地区：[1]中国科学院半导体研究所,北京100083 [2]The Walter Schottky Institute,Technical University of Munich,Germany

出　　处：《Journal of Semiconductors》2006年第11期2015-2018,共4页半导体学报（英文版）

基　　金：国家自然科学基金(批准号:60510173;60536010;60506006);德国基金委资助项目~~

摘　　要：提出了适用于一种1.55μm掩埋隧道结垂直腔面发射激光器(VCSEL)芯片的小信号等效电路模型.等效电路的提出是基于半导体激光器速率方程以及VCSEL芯片结构,电路中各元件都有严格的物理意义.根据实验测得芯片的反射系数及传输参数,通过小信号等效电路仿真模拟,得到电路各元件参数值.不同偏置电流下,模拟结果与实验结果吻合都非常好,证明了该等效电路的有效性.An equivalent circuit model for a 1.55μm buried tunnel junction VCSEL chip is proposed. The model is based on the semiconductor laser rate equations and the structure of the VCSEL chip,and every element in the circuit is represented. Values of the elements of the circuit are established using the reflection coefficient and transmission frequency response data. The simulation results agree well with experimental data at different bias currents, verifying the validity of the equivalent circuit model.

关 键 词：VCSEL 等效电路模型 S参数 模拟 

分 类 号：TN365[电子电信—物理电子学]