多层片式压敏电阻器的最新发展动向  

Recent Development Trends of Multilayer Chip Varistors

作　　者：王兰义[1] 吕呈祥 唐国翌[1] 

机构地区：[1]清华大学深圳研究生院新材料研究所,广东深圳518055 [2]河南金冠王码信息产业股份有限公司,河南南阳473057

出　　处：《电子元件与材料》2006年第12期8-11,共4页Electronic Components And Materials

基　　金：河南省重点科技攻关计划资助项目(0523020200)

摘　　要：介绍了多层片式压敏电阻器的现状,分析了当前工艺中存在的问题(内电极与瓷体材料的反应和端电极的爬镀)和解决的办法,指出了其最新的发展动向。在工艺技术和应用上,多层片式压敏电阻器向小型化、阵列化、模块化及低电容等方向发展;同时还要从环境保护和生产成本角度来考虑,采取水基流延制备工艺和采用新配方或纳米材料来降低压敏陶瓷烧结温度。The recent development in multilayer chip varistors （MLCV） was reviewed. The overplating and reaction between internal electrodes and Bi203 were two main problems in the production of MLCV, their solutions were also given, The future development directions of MLCVs are that multilayer chip varistors are being downsized and their capacitance is lowered. MLCV arrays and MLCV integration with other chip components such as multilayer ceramic chip capacitors （MLCC） are also their development trends. Water-based tape casting, new lead-free compositions or nanomaterials with low sintering temperature are used in the production of multilayer chip varistors in the view of environmental protection and production cost.

关 键 词：电子技术 多层片式压敏电阻器 综述 爬镀 水基流延 静电放电保护 

分 类 号：TM546[电气工程—电器] TN379[电子电信—物理电子学]