真实缺陷的矩形模型及其关键面积计算  

Rectangular Defect Model and Critical Area Computation of Real Defect Outlines in VLSI

作　　者：王俊平[1] 郝跃[1] 

机构地区：[1]西安电子科技大学微电子研究所

出　　处：《电子学报》2006年第11期1974-1977,共4页Acta Electronica Sinica

基　　金：国家863高科技计划(No.2003AA1Z1630)

摘　　要：在集成电路(IC)中,为了进行有效的成品率估计和故障分析,与光刻有关的缺陷形状通常假设为圆模型.然而,真实缺陷的形状多种多样.本文提出一种真实缺陷的矩形模型及与之相关的关键面积计算模型,该模型既考虑了真实缺陷的形状又考虑了IC版图布线的特点.在缺陷引起故障概率预测方面,仿真结果表明新模型比圆模型更接近真实缺陷引起的故障概率.In integrated circuits,the defects associated with photolithography will generally be assumed to take the shape of circular discs in order to perform the efficient estimation of yield and fault analysis. However, real defects exhibit a great variety of shapes. ]＇his paper provides a rectangular model of real defects and the model of computing the critical area involved, which take the s^pe of real defects as well as the features of the layout muting into account. In the aspect of the prediction of fault probability, the simulation results show that the new model may predict the fault probability caused by real defects more accurately than the circular model does.

关 键 词：真实缺陷 缺陷的矩形模型 关键面积模型 成品率 

分 类 号：TN405[电子电信—微电子学与固体电子学]