一种贮存式氧化物阴极  

A Reservoir Oxide Cathode

作　　者：王小霞[1] 廖显恒[1] 罗积润[1] 赵青兰[1] 

机构地区：[1]中国科学院电子学研究所,北京100080

出　　处：《电子与信息学报》2006年第11期2179-2181,共3页Journal of Electronics & Information Technology

摘　　要：该文论述了一种新的贮存式氧化物阴极。这种阴极的直流发射、脉冲发射和阴极寿命性能都比普通氧化物阴极好。文中对阴极发射材料的形貌、贮存活性物质的结构进行了分析,观察了阴极镍网表面电子发射图像,讨论了阴极发射机理。A new kind of reservoir oxide cathode is presented in this paper. The characteristics of the cathode, such as, DC and PC emission, resistance to poisoning and lifetime, are better than those of conventional oxide cathode under same conditions. The SEM of the surface emission material and the XRD of the reservoir active material of the cathode are analyzed, and the THEM （Thermionic Electronic Emission Microscopy） of the Ni-net surface of the cathode is observed, based on which the emission mechanism of the cathode is discussed.

关 键 词：氧化物阴极 贮存活性物质 发射电流 阴极寿命 

分 类 号：O461.1[理学—电子物理学]