Organic light-emitting devices based on new rare earth complex Tb(p-ClBA)_3phen  

作　　者：CHEN Zheng DENG Zhen-bo SHI Yu-meng XU Deng-hui GUO Dong HAO Jin-gang WANG Rui-fen 

机构地区：[1]Key Laboratory of Luminescence and Optical Information, Ministry of Beijing Jiaotong University, Beijing 100044, China [2]Department of Chemistry, Hebei Normal University, Shijiazhuang 050091, China

出　　处：《Optoelectronics Letters》2006年第6期403-405,共3页光电子快报（英文版）

基　　金：Supported by National Natural Science Foundation of China (90201004) ;Beijing Science and Technology Foundation ( H030430020410);Hebei provice Natural Science Foundation (203148) .

摘　　要：A new rare earth complex Tb（p-CIBA）3phen was synthesized and introduced into organic tight emitting devices （OLEDs） as emitting material. The Tb（p-CIBA）3phen was doped into PVK to improve the filmforming and hole-transporting property. Two kinds of devices were fabricated. The device structure is as the following. Single-layer device： ITO/PVK： Tb （p-CIBA） 3 phen /LiF/Al; double-layer device： ITO/PVK： Tb（p-CIBA）3phen/AIQ/LiF/AI. The performances of both devices were investigated carefully. We found that the emission of PVK was completely restrained,and only the green emission was observed from the electroluminescence. The full width at half maximum （FWHM） was less than 10 nm. The highest EL brighthess of the single-layer device is 25.4 cd/cm^2 at a fixed bias of 18 V,and the highest EL brightness of the double-layer device reaches 234.8 cd/cm^2 at a voltage of 20 V.

关 键 词：功能发光器件 发光材料 亮度 电致发光 

分 类 号：TN383[电子电信—物理电子学]