电致发光用SnO_2:Sb透明导电膜的制备及性能  

PREPARATION AND PROPERTIES OF SnO_2:Sb TRANSPARENT CONDUCTIVE FILM USED FOR ELECTROLUMINESCENT

作　　者：于长凤[1] 朱小平[1] 张脉官 凌青 戴静[1] 

机构地区：[1]景德镇陶瓷学院,景德镇333001 [2]广东佛山金刚新材料所,佛山528000 [3]苏州国巨电子,苏州215000

出　　处：《中国陶瓷》2006年第11期18-20,23,共4页China Ceramics

摘　　要：采用溶胶凝胶法浸渍提拉工艺制备透明导电膜,并考察了Sb3+的掺杂量、膜的厚度、热处理温度对薄膜电阻的影响,以及不同的处理方法对薄膜透过率的影响,制得透明导电膜的电阻率最低可达ρ=16×10-3Ω·cm,薄膜连续性、致密性好,平均透光率达到90%以上。对所制备的透明导电膜用XRD、FT-IR、SEM、TEM进行了分析表征。Transparent conductive film was prepared by dip coating method with sol-gel. The effects of Sb-doped＇ s amount, thickness of the film and heat treatment temperature on resistance of the conductive film were studied, and the effect of different process methods on film＇ s transmittance was studied as well. Transparent conductive film were characterized by XRD, FT-IR, SEM, TEM. The results showed that a good continuous and dense transparent conductive film was obtained with surface resistance down to ρ = 16 × 10^-3 Ω·cm and mean transmittance up to 90%.

关 键 词：SNO2薄膜 Sb掺杂 透明导电膜 溶胶-凝胶法 浸渍提拉 

分 类 号：TQ174.758[化学工程—陶瓷工业]