SiO_2-Si界面实现Ga掺杂的研究  

Essential Investigation of Realizing Ga Doping at Interface of SiO_2-Si

作　　者：裴素华[1] 黄萍[1] 程文雍[1] 

机构地区：[1]山东师范大学,山东济南250014

出　　处：《稀有金属材料与工程》2006年第11期1797-1799,共3页Rare Metal Materials and Engineering

基　　金：国家自然科学基金(69976019)资助项目

摘　　要：通过原子力显微镜(AFM)、二次离子质谱(SIMS)、扩展电阻(SRP)等方法对Ga在SiO2薄层、SiO2-Si界面的扩散特性进行测试表征与机理分析。其结果表明:源于H2和Ga2O3高温反应新生成的元素Ga,经SiO2薄层的快速吸收和输运,到达SiO2-Si的界面,其吸收-输流量在确定的扩散条件下正比于掺杂时间;Ga在SiO2-Si界面按照固-固扩散原理和凭借在Si内有较高溶解度特性实现了Si体内有效扩散;上述两者的有机结合,使Ga原子通过理想表面扩入硅体,从而得到高均匀性、高重复性的扩散结果。The diffusion characteristics of Ga in SiO2 films and at the interface of SiO2-Si is characterized and analyzed by means of SIMS, SRP and AFM respectively. The results indicate that the new element Ga born of pyroreaction of H2 and Ga2O3 is absorbed rapidly by SiO2 films and reach the interface of SiO2-Si, its absorb-export flux is directly proportional to doping time under a certain condition; Ga diffuses effectively in the Si body according to solid-solid diffusion principle at the interface of SiO2-Si and depend on the higher solubility in Si; by well combination of the too above mentioned, Ga diffused into the Si body through ideal surface and gained diffused result of high homogeneity and high repeatability.

关 键 词：GA SIO2 SiO2-Si界面 吸收和输运 固-固扩散 

分 类 号：TN305.3[电子电信—物理电子学]