闪耀光栅外腔反馈压窄半导体激光器线宽技术的研究  

Study of blaze grating feedback external-cavity semiconductor laser with narow-linewidth

作　　者：江鹏飞[1] 周燕[1] 谢福增[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《光学技术》2006年第6期869-870,878,共3页Optical Technique

摘　　要：在讨论半导体激光线宽压窄理论的基础上,利用闪耀光栅作为外部反馈元件,介绍了由中心波长为949.6nm、原始线宽为1.2THz的单管半导体激光器构成的反馈外腔,它能够很好的改善半导体激光器的性能。实验得到了中心波长稳定的、单纵模的高质量激光输出,边模抑制比大于30dB,线宽优于1.2MHz(Δλ<3.6×10-6nm)。实验证实了强反馈能够很好地改善外腔半导体激光器的动态特性。Based on the discussion of linewidth-narrowing of the semiconductor laser, experimental results of external cavity semiconductor lair with narrow-linewidth are reported. With a blaze grating offering external feedback, strong coupled external cavity for a commercial ,semiconductor laser can improve the output characteristics of 949.6nm semiconductor laser. Its side mode suppression ratio is more than 30dB, and spectrum linewidth is narrower than 3.6×10^-6nm. The experiment shows that the strong feedback can improve the dynamical characteristics of an external cavity semiconductor laser.

关 键 词：外腔半导体激光器 外腔反馈 强反馈 窄线宽 

分 类 号：TN24[电子电信—物理电子学]