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作 者:李磊[1] 徐政[1] 林枞[1] 孙丹峰[2] 彭虎
机构地区:[1]同济大学材料科学与工程学院,上海200092 [2]苏州中普电子有限公司,江苏苏州215011 [3]长沙隆泰微波热工有限公司,湖南长沙410013
出 处:《材料科学与工程学报》2006年第6期887-890,共4页Journal of Materials Science and Engineering
摘 要:采用微波和传统烧结工艺制备了ZnO压敏电阻,比较了微波和传统烧结ZnO压敏电阻的相组成、表面微观结构和电性能,探讨了烧结温度和保温时间对微波烧结样品的致密化和电性能的影响。与传统工艺相比,微波烧结工艺明显改善了ZnO压敏电阻的致密化行为,缩短了烧结周期,改善了电性能。优化的微波烧结样品的压敏电压U1mA为521.8V,非线性系数α是61.4,漏电流IL为1.25×10-6A,残压比Kr为1.45,通流量Im达11600A,均达到或超过了传统工艺水平。微波烧结样品的通流量Im更是比传统烧结样品高约50%。ZnO varistors were prepared using microwave and conventional sintering processes. Their phase constituents, surface and electric properties were compared. The effects of the sintering temperature and soaking time on densifications and electrical properties of microwave sintered samples were investigated. The microwave sintering process substantially enhances the densification behavior, reduces the sintering cycle and improves electrical properties compared with the conventional process. Optimized microwave sintered samples possess better electric properties, including the breakdown voltage U1mA(521.8V), nonlinear coefficient a (61.4), leakage current IL (1.2.5× 10^-6 A), residual voltage ratio K, (1.45) and surge current Im (11600A), than those conventional sintered. Especially, the surge current Im is about 50% higher than that conventional sintered.
分 类 号:TN304.93[电子电信—物理电子学] TN015
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