应力对铋系铁电薄膜性能影响的研究进展  

PROGRESS IN THE STUDIES OF STRESS EFFECT ON THE PROPERTIES OF FERROELECTRIC THIN FILMS

作　　者：吴秀梅[1] 吕笑梅[1] 朱劲松[1] 

机构地区：[1]南京大学固体微结构国家重点实验室物理系,南京210093

出　　处：《物理学进展》2006年第3期490-494,共5页Progress In Physics

基　　金：国家自然科学基金(90401014;10021001;10574066);国家973项目(2002CB613303);江苏省自然科学基金(No.BK2004084)

摘　　要：应力普遍存在于铁电薄膜中,是影响薄膜性能和薄膜电子器件可靠性的一个重要参数。本文系统介绍了本小组近年来所进行的应力对铋系铁电薄膜(Bi3.25La0.75Ti3O12,Bi3.15Nd0.85Ti3O12和SrBi2Ta2O9)的铁电性能及与铁电存储有关的开关、疲劳性能等影响的研究。结果表明:张应力有利于增大薄膜的剩余极化和开关电荷量,而压应力却使得两者都降低。还发现:应力对薄膜的开关时间、矫顽场、疲劳性能等都有影响。其结果都与“应力作用下薄膜内铁电畴的重新取向”有关。The effect of stress on the ferroelectric properties of thin films （Bi3.25La0.75Ti3O12,Bi3.15Nd0.85Ti3O12 and SrBi2Ta2O9） has been investigated. The tensile stress along film surface is helpful in increasing either the remnant polarization or the net-switched charge, while the compression can lead them to decrease. Experimental results also indicate that the switching time, coercive field and fatigue properties are related to the stress. All of these phenomena are related to the reorientation of domains induced by stress.

关 键 词：应力效应 铋系铁电薄膜 铁电性能 开关与疲劳 

分 类 号：O484.4[理学—固体物理]