含Bi层状钙钛矿型铁电薄膜在金属电极上的非c轴取向生长研究  

NON-c-AXIS ORIENTED GROWTH OF FERROELECTRIC THIN FILMS OF BISMUTH-LAYERED PEROVSKITE ON METAL ELECTRODES

作　　者：刘晓林[1] 陈晓琴[1] 祁亚军[1] 卢朝靖[1] 

机构地区：[1]湖北大学材料科学与工程学院,武汉430062

出　　处：《物理学进展》2006年第3期495-499,共5页Progress In Physics

基　　金：国家自然科学基金(10474019);教育部新世纪优秀人才支持计划;湖北省教育厅重大科研计划湖北省铁电压电材料与器件重点实验室(湖北大学)开放基金资助

摘　　要：用sol-gel工艺直接在(111)Pt/Ti/SiO2/Si衬底上分别制备了62%a/b轴择优、65%(014)/(104)择优、高c轴择优取向生长的Bi3.15Nd0.85Ti3O12(BNdT)铁电薄膜。发现BNdT薄膜的铁电、介电和压电性能强烈依赖于晶粒的择优取向,从而证实BNdT中自发极化矢量Ps靠近a轴。透射电镜观察表明,非c轴取向薄膜中的柱状晶粒从底电极Pt表面一直延伸到薄膜上表面,而c轴择优取向薄膜中的晶粒细小且主要呈等轴状。讨论了含Bi层状钙钛矿型铁电薄膜在金属电极上的择优取向生长机制。Bi3.15Nd0.85Ti3O12 （BNdT） a/b-axis orientation, 65% （104）/（014） thin films of three different preferential orientations[62 % orientation and ≥ 50% c-axis orientation] were sol-gel grown directly on （111）Pt/Ti/SiO2/Si substrates. Large columnar grains in non-c-axis oriented thin films penetrate the whole film thickness, whereas films of c-axis preferential orientation contain equiaxed fine grains. A mechanism for the oriented growth of bismuthlayered perovskite thin films＇is proposed to understand the different microstructures of the thin films. Strong dependences of ferroelectric, dielectric, piezoelectric properties on film orientation were observed. The large anisotropy of electric properties confirms that the polarization vector of BNdT is close to the a axis.

关 键 词：凝聚态物理学 薄膜物理学 溶胶-凝胶 取向生长 铁电体 

分 类 号：O484.4[理学—固体物理]