磁调制半导体纳米体系中电子自旋输运  

Electron-spin Transport in Magnetically Modulated Semiconductor Nanosystems

作　　者：卢卯旺[1] 

机构地区：[1]湖南科技学院电子工程与物理系,湖南永州425100

出　　处：《湖南科技学院学报》2006年第11期156-159,共4页Journal of Hunan University of Science and Engineering

摘　　要：研究了一般的磁调制半导体纳米体系中电子自旋输运性质,其可以通过在半导体异质结表面沉积具有任意磁化方向的铁磁条带形成。通过对真实InAs材料系统的计算,发现这种系统具有很强的电子自旋极化效应,其自旋极化度在共振时超过80%。因此,我们的系统可以用于电子自旋过滤器。Spin-dependent transport properties were investigated in generic magnetically modulated semiconductor nanosystems, which can be realized by depositing a ferromagnetic stripe with arbitrary magnetization on the top of a semiconductor heterostructure. By numerical calculations for the realistic InAs material, it is show that this kind of systems possesses a considerable spin polarization effect, and its degree can reach 80% at resonance. Thus, we propose an alternative scheme to realize spin injection into semiconductor, and our considered systems can be used as spin filters.

关 键 词：自旋电子学 磁调制纳米体系 自旋极化 自旋过滤 

分 类 号：TN304.01[电子电信—物理电子学]