硅多条两维位置灵敏探测器的研制  

Development of Si multi-strip bi-dimension position sensitive detectors

作　　者：谭继廉[1] 靳根民[1] 段利敏[1] 卢子伟[1] 袁小华[1] 张玲[1] 肖国青[1] 徐瑚珊[1] 田大宇[2] 宁宝俊[2] 王玮[2] 张录[2] 

机构地区：[1]中国科学院近代物理研究所,甘肃兰州730000 [2]北京大学微电子所,北京100871

出　　处：《核电子学与探测技术》2006年第6期703-705,共3页Nuclear Electronics & Detection Technology

摘　　要：描述了用平面工艺技术研制基于硅多条的两维位置灵敏探测器的制备工艺技术及性能测试初步结果。这种探测器的灵敏面积为50 mm×50 mm。P掺杂面被等分成相互平行的长度为50mm,宽度为3mm的16条,相邻条之间的间隔为100μm。硅条P掺杂层是一层均匀分布的电阻层,利用电荷分除法,可以得到入射粒子在该条上的位置(Y位置)。当探测器工作在全耗尽偏压下时,大部分单条的反向漏电流<30nA。对239Puα粒子得到能量分辨率<2.5%,位置分辨<0.5 mm。The technology and preliminary test results of Si bi-dimension position sensitive detector based on multi-strip structure fabricated by using planar technology were described in this paper. The sensitive area of this kind of detector is 50×50 mm^2. The P side surface was divided into equal 16 strips with 100μm space between neighbouring two strips, each strip having length of 50 mm and width of 3 ram. The strips doped on P surface are resistive P junction layer featuring high uniformity, The incident positions of particles can be determined by using charge-division method. When the detector was biased with full deplation voltage ,the reverse leakagecurrents of most of strips were ess than 30 nA, and an energy resolution of 〈2.5% and a position resolution of 〈0.5 mm were obtained for^239 Pu α particles.

关 键 词：平面工艺 硅多条 两维位置灵敏 探测器能量分辨 位置分辨 

分 类 号：TL814[核科学技术—核技术及应用]