电子逃逸效应对PIN探测器γ灵敏度的影响  

Impact of electron-escaping effect on the γ-ray sensitivity of PIN detector

作　　者：杨建伦[1] 李如荣[1] 徐荣昆[1] 杨高照[1] 钟耀华[1] 李林波[1] 王真[1] 

机构地区：[1]中国工程物理研究院核物理与化学研究所,四川绵阳621900

出　　处：《核电子学与探测技术》2006年第6期739-741,共3页Nuclear Electronics & Detection Technology

基　　金：中国工程物理研究院科学技术预研基金资助(20030209)

摘　　要：通过数值模拟和实验研究了电子逃逸效应对PIN探测器γ灵敏度的影响及铝、聚乙烯等不同材料对电子逃逸效应的补偿作用。数值模拟研究主要利用MCNP程序对γ射线在PIN探测器灵敏层中的能量沉积进行数值计算,得到探测器输出的脉冲幅度谱和灵敏度计算结果;实验研究利用60Co源发射的能量为1.17和1.33MeV的γ射线对不同补偿条件下的γ灵敏度进行标定。结果表明,电子逃逸效应对灵敏度存在显著影响,在探测器前设置铝、聚乙烯等补偿材料可对电子逃逸效应进行适当补偿。The impact of electron-escaping effect on the γ-ray sensitivity of PIN detector and corresponding compensation effect of aluminum and polyethylene are simulated and experimentally studied. The simulation is conducted by using MCNP code to calculate the pulse-height energy deposition of γ-rays in the sensitive layer of PIN detector, the result of which is then analyzed to give a proposed sensitivity. Experimental study is conducted by using ^60Co gamma-ray source to calibrate the sensitivity under various compensating conditions. The simulation and calibration results indicate that electron-escaping effect has significant impact on the sensitivity and can be partially compensated by setting aluminum or polyethylene sheet in front of the detector.

关 键 词：PIN探测器 Γ灵敏度 电子逃逸 

分 类 号：TL81[核科学技术—核技术及应用]