改进的CMOS电荷灵敏前放噪声优化设计方法  

A modified design method of noise optimization for CMOS charge sensitive preamplifier

作　　者：邓智[1] 刘以农[1] 程建平[1] 康克军[1] 

机构地区：[1]清华大学工程物理系,北京100084

出　　处：《核电子学与探测技术》2006年第6期801-804,共4页Nuclear Electronics & Detection Technology

摘　　要：CMOS专用集成电荷灵敏前放的噪声性能对于辐射探测非常关键。提出了一种改进的CMOS电荷灵敏前放低噪声设计方法,通过实例计算得到的噪声结果比现有方法都有不同程度的提高。Noise of CMOS charge sensitive preamplifier ASIC is a critical factor for radiation detection. A modified low noise design method of CMOS charge sensitive preamplifier was proposed in this paper. It is shown in a design example that the noise performance optimized by this method is more or less better than other methods currently used.

关 键 词：电荷灵敏前置放大器 CMOS专用集成电路 低噪声设计 

分 类 号：TL8[核科学技术—核技术及应用]