阵列康普顿背散射成像系统设计的蒙特卡罗仿真研究  

The Monte Carlo simulation of Compton back-scattering imaging system with detector array

作　　者：王振涛[1] 王立强[1] 吴志芳[1] 周立业[1] 

机构地区：[1]清华大学核能与新能源研究院,北京100084

出　　处：《核电子学与探测技术》2006年第6期831-834,共4页Nuclear Electronics & Detection Technology

基　　金：国家自然科学基金重点项目(60332040)

摘　　要：阵列康普顿背散射技术中存在探测到的射线强度低和不同测量单元间散射线干扰等问题。针对这些,进行MCNP仿真实验,分析各种因素对不同测量单元散射线干扰及探测到射线强度的影响趋势和影响程度,为实际系统的设计提供参考。There are two main problems in technology of Compton back-scattering with detector array. One is the low detecting intensity and the other is the influence of different detecting ceils. Aiming at these problems, this paper analyses the effect trend and degree of several different factors to the problems by using MCNP simulation. This work provides references for system designing.

关 键 词：阵列康普顿背散射 蒙特卡罗MCNPO411 

分 类 号：TL67[核科学技术—核技术及应用]