瞬时辐射对80C31单片机性能的影响  

Influence of transient radiation for the behaviour of the 80C31 single-chip microcontrollers

作　　者：周开明[1] 谢泽元[1] 杨有莉[1] 

机构地区：[1]中国工程物理研究院电子工程研究所,四川绵阳621900

出　　处：《核电子学与探测技术》2006年第6期981-984,共4页Nuclear Electronics & Detection Technology

摘　　要：研究了80C31单片机瞬时剂量率辐射特性和闭锁电流随“闪光-1”γ射线剂量率的变化规律,分析了80C31单γ片机在浅和深闭锁时具有不同的电流特性。Radiation characteric of transient dose rate and the changed rule of latchup current with the gamma dose rate in ＂flash-1＂ were researched in the 80C31 Single-chip Mierocontrollers. The latchup current characteristic of the 80C31 Single-chip Microcontrollers was analyzed in shallow deep latchup

关 键 词：80C31单片机 剂量率 闭锁电流 

分 类 号：TN386[电子电信—物理电子学]