RTD器件参数和测量方法——共振隧穿器件讲座(8)  

Device Parameters and Measurement Method of RTD:Lecture of RTD(8)

作　　者：郭维廉[1,2,3] 

机构地区：[1]天津工业大学信息与通讯工程学院 [2]专用集成电路国家级重点实验室,石家庄050051 [3]天津大学电子信息工程学院,天津300072

出　　处：《微纳电子技术》2006年第12期564-571,581,共9页Micronanoelectronic Technology

摘　　要：表征RTD器件特性和性能的参数分为直流负阻、等效电路及频率响应和开关时间三类。系统全面地介绍这三类参数及其测量方法,为测量和评价RTD的器件性能打下良好的基础。The parameters for characterizing the RTD device performance and device characteristics can be divided into following three classes： D.C. NDR parameters; equivalent circuit parameters; frequency response and switching time. The three kinds of parameters and measuring methods were introduced systematically and completely. It makes a good basis for measuring and evaluating the device performance of RTD.

关 键 词：RTD特性和测量 测量方法 直流参数 电路参数 瞬态参数 

分 类 号：TN31[电子电信—物理电子学]