双缺陷光子晶体禁带结构特性研究  

Study of Bandgap Structure of Photonic Crystals with Two Defects

作　　者：耿继国[1] 石宗华[1] 闫珂柱[1] 

机构地区：[1]曲阜师范大学物理工程学院,山东曲阜273165

出　　处：《光电子．激光》2006年第12期1497-1501,共5页Journal of Optoelectronics·Laser

摘　　要：用特征矩阵法研究了带有双缺陷的一维光子晶体的禁带结构特性。由于两缺陷间存在相互作用,其禁带结构的性质受到两缺陷间隔光学厚度及缺陷层折射率的影响。定义了描述两缺陷间相互作用强弱的关联系数,进而分析了关联系数与两缺陷层间相隔光学厚度及缺陷层折射率的关系。通过数值计算和计算机模拟,确定了光子晶体结构的特征间隔光学厚度。By means of transfer matrix method,we study the photonic bandgap properties of photonic crystals with two defects. Due to the interaction between two defects, the bandgap structure of one-dimensional photonic crystals with two defects is affected by the optical thickness between two defects and the refractive index of the defects. We defined a correlative coefficient,which can describes interaction between the two defects. And then, we discuss the dependence of correlative coefficient on the septal optical thickness and the defect＇s refractive index. The photonic crystal＇s characteristic septal optical thickness is determined by calculation and simulation.

关 键 词：双缺陷一维光子晶体 关联系数 特征间隔光学厚度 

分 类 号：O483[理学—固体物理]