高功率电磁脉冲对砷化镓金属半导体场效应管的影响  

Numerical simulation of the influence of high power electromagnetic pulses on GaAs MESFET

作　　者：张寒峭[1] 黄卡玛[1] 

机构地区：[1]四川大学电子信息学院,成都610064

出　　处：《强激光与粒子束》2006年第11期1873-1878,共6页High Power Laser and Particle Beams

基　　金：国家自然科学基金资助课题(60471045);国家863计划项目资助课题

摘　　要：采用时域有限差分方法,通过求解麦克斯韦方程、热传导方程和载流子方程,模拟了在电磁脉冲辐射下,场效应管器件温度和端口散射参数的变化过程。研究了不同幅度脉冲序列和上升沿不同的脉冲对砷化镓金属半导体场效应管的影响,对比了各种不同脉冲作用下场效应管性能的变化规律。该方法克服了传统电路模型无法模拟电磁波与器件内部活动粒子作用过程的缺点,可以直接模拟器件温度和散射参数在高功率电磁脉冲辐射下的时域变化过程。The coupled Maxwell＇s equations, heat transport equation and carrier equations are solved to simulate the change of temperature and scatering parameters of the GaAs MESFET which is under the irradiation of high power electromagnetic pulses. The transient temperature response curves are also calculated. The effects of electromagnetic pulse sequences with different magnitude and pulses with different rise time are studied and compared. The global modeling method and the heat transport equation are coupled for the first time. This method is based on physical modeling, taking into account the electromagnetic coupling, radiation effects and electron-wave interaction. The results show that the temperature between the gate and the source rises rapidly and the scattering parameters deteriorate dramatically under the irradiation of high power electromagnetic pulses.

关 键 词：砷化镓场效应管 全局模型 电磁脉冲 时域有限差分 热效应 

分 类 号：TN011[电子电信—物理电子学] TN386