碳纳米管薄膜的制备及处理对场发射特性的影响  

Synthesis of CNTs Film and Influence of Treatment of CNTs Film on Field Emission Properties

作　　者：田时开[1] 江天府[1] 杨兴华[1] 曾葆青[2] 

机构地区：[1]中国民航飞行学院计算机学院,四川广汉618307 [2]电子科技大学物理电子学院,成都610054

出　　处：《电子科技大学学报》2006年第6期936-938,共3页Journal of University of Electronic Science and Technology of China

摘　　要：采取直接在硅片上真空蒸镀NiCr合金作为催化剂,用化学气相沉积法制备了碳纳米管薄膜。并采用H2等离子体球处理碳纳米管薄膜,测试其场发射特性,并与未经处理的碳纳米管薄膜进行了比较,得到碳纳米管薄膜开启场强有所降低,为1～1.2V/μm。对碳纳米管薄膜进行老炼处理,最大场发射电流由12.3μA提高到34μA。In this paper, NiCr alloy was vaporized on the silicon in vacuum as the catalyzer and synthesized Carbon NanoTubes （CNTs） film using chemical vapour deposition. We treated CNTs film with H2 plasma and measured the field emission characteristic of CNTs film. CNTs film＇s turn on fields was 1- 1.2 V/μm and had obviously reduced compared with that not treated. The most field emission current was increased 34 μA from 12.3μA after annealed.

关 键 词：碳纳米管 场发射 化学气相沉积法 老炼 

分 类 号：O462.4[理学—电子物理学]