Fe-Si-O颗粒膜的霍尔效应研究  

Study on Hall Effect of Fe-Si-O Granular Films

作　　者：杨啸林[1] 阮成礼[1] 葛世慧[2] 席力[2] 

机构地区：[1]电子科技大学物理电子学院,成都610054 [2]兰州大学教育部应用磁学开放实验室,兰州730000

出　　处：《电子科技大学学报》2006年第6期964-966,共3页Journal of University of Electronic Science and Technology of China

摘　　要：利用射频共溅射方法制备了一系列不同金属含量x的Fex(SiO2)(1?x)金属?绝缘体颗粒膜,系统地研究了薄膜的霍尔效应及其产生机理。在室温和1.3T的磁场下,当体积分数为0.52时,霍尔电阻率有最大值为18.5μ?·cm。样品的电阻率温度曲线研究表明异常霍尔电阻率可能来源于3d局域电子-电子的散射作用。在300℃以内的不同温度下将Fe0.52(SiO2)0.48颗粒膜回火,饱和霍尔电阻率随温度的变化不大,样品具有良好的热稳定性,这表明Fe0.52(SiO2)0.48颗粒膜在300℃下的温度范围内有较好的应用前景。The granular films of Fe-Si-O with different volume fraction x were fabricated by RF co-sputtering method. The microstructure, magnetic and transport properties, and Giant Hall Effect （GHE） were studied systematically. In room temperature and magnetic field of 1.3 Tesla, the maximum GHE value of 18.5 μΩ·cm was obtained at the volume fraction of 0.52. The origin of this giant Hall Effect is contributed to 3d local electronelectron interaction. The annealing temperature under 300℃, the saturated Hall resistivity of the Fe0.52（SiO2）0.48 granular film does no decrease much. Namely, the sample has good thermal stability, which implies that this sample may be considered as a magnetic field sensor for operating temperatures below 300℃.

关 键 词：颗粒膜 磁性 电阻率 霍尔效应 

分 类 号：O482.54[一般工业技术—材料科学与工程]