IGCT功能仿真模型及其应用  

Functional Model and Application of IGCTs

作　　者：千金[1] 刘文华[1] 范子超[1] 宋强[1] 

机构地区：[1]清华大学,北京100084

出　　处：《电力电子技术》2006年第6期126-130,共5页Power Electronics

基　　金：国家重点基础研究发展规划973项目~~

摘　　要：集成门极换流晶闸管(IntegratedGateCommutatedThyristors,简称IGCT)以其优越的性能,在中、高压大功率变换器领域得到越来越广泛的应用。本文在SIMPLORER仿真平台下建立了IGCT器件的功能仿真模型;介绍了建模原理及模型结构。根据5SHY35L4510型IGCT给出的主要参数进行了电路仿真。根据仿真结果,分析了电路中各参数对器件开关瞬态过程电压、电流的影响。The application of the Integrated Gate Commutated Thyristors （IGCT） in middle and high-voltage highpower converters has been more and more widely used due to its great performance.In this paper,a functional model of IGCTs is investigated,which is realized with the simulation tool of SIMPLORER package.This paper describes the principle and the structure of the model,and also gives the simulation results of the model for an IGCT （ABB＇s production 5SHY 35L4510）.According to the results,at the end of this paper,the effects to the voltage and current waveforms of changing parameters of the test circuit are analyzed.

关 键 词：电力半导体器件 逆变器 软件 仿真/集成门极换流晶闸管 

分 类 号：TN34[电子电信—物理电子学]