ICP－AES法测定二氧化硅中的微量杂质元素  

Determination of Trace Impurities in Silicon Dioxide by ICP-AES

作　　者：颜科[1] 虞建平[1] 谭明霞[1] 

机构地区：[1]南京玻璃纤维研究设计院

出　　处：《硅酸盐通报》1996年第5期49-51,共3页Bulletin of the Chinese Ceramic Society

摘　　要：试样经硫酸—氢氟酸分解，在盐酸介质中用ＩＣＰ－ＡＥＳ法测定二氧化硅中的微量杂质元素。该方法与原子吸收法（ＡＡ）和分光光度法相比更为优越，其化学干扰少，操作简便，快速，重显性好，准确度高，测定结果的相对标准偏差（ＲＳＤ）小于５％The sample was decomposed by H 2SO 4-HF. In a medium containing HCl, the trace impurities were determined by ICP-AES. The method is more advantageous than AA and spectrophotometry which are used at present. It includes less chemical interference and is easier and faster to operate with stable data and accurate results, and the RSD is <5%.

关 键 词：二氧化硅 杂质元素 分光光度法 

分 类 号：TQ127.2[化学工程—无机化工]