Effect of ambient oxygen pressure on structural, optical and electrical properties of SnO_2 thin films  

作　　者：ZHAO Songqing ZHOU Yueliang WANG Shufang ZHAO Kun HAN Peng 

机构地区：[1]Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China [2]Department of Mathematics and Physics, China University of Petroleum, Beijing 102249, China

出　　处：《Rare Metals》2006年第6期693-696,共4页稀有金属（英文版）

基　　金：This work was financially supported by the National Natural Science Foundation of China (No. 50532090).

摘　　要：PolycrystaUine SnO2 thin films were deposited on sapphire substrates at 450℃ under different ambient oxygen pressures by pulsed laser deposition technique. The effect of ambient oxygen pressure on the structural, optical and electrical properties of SnO2 thin films was studied. X-my diffraction and Hall measurements show that increasing the ambient oxygen pressure can improve crystallization of the films and decrease resistivity of the films. A violet emission peak centered at 409 nm was observed from photoluminescence measurements for SnO2 films under deposition ambient oxygen pressure above 5 Pa, which is related to the improvement of crystalline of the films.PolycrystaUine SnO2 thin films were deposited on sapphire substrates at 450℃ under different ambient oxygen pressures by pulsed laser deposition technique. The effect of ambient oxygen pressure on the structural, optical and electrical properties of SnO2 thin films was studied. X-my diffraction and Hall measurements show that increasing the ambient oxygen pressure can improve crystallization of the films and decrease resistivity of the films. A violet emission peak centered at 409 nm was observed from photoluminescence measurements for SnO2 films under deposition ambient oxygen pressure above 5 Pa, which is related to the improvement of crystalline of the films.

关 键 词：tin oxide pulsed laser deposition oxygen pressure PLD RESISTIVITY 

分 类 号：TG1[金属学及工艺—金属学] O484[理学—固体物理]