掺杂氧化钇的ZnO电阻片电性能和微观结构特征  

The Electrical and Microstructral Performance of ZnO-Bi_2O_3 Based Varistor Doped with Y_2O_3

作　　者：马军[1] 王玉平[1] 

机构地区：[1]西安电瓷研究所,陕西西安710077

出　　处：《电瓷避雷器》2006年第6期26-29,共4页Insulators and Surge Arresters

摘　　要：研究了掺杂氧化钇对D5ZnO电阻片的电位梯度、方波容量和压比(U5kA/U1mA)的影响,结果表明,随着氧化钇含量的增加,电位梯度持续增加,最高达到367V/mm。当氧化钇含量在0.3%～0.7%时,压比和方波容量性能最好,分别为1.65和246J/cm3。从微观分析结果,可以看出,上述电性能特征在微观层次上的产生根源是含钇晶间相的总量和分布的变化。通过能谱分析和X射线衍射分析,确定了含钇晶间相的成分范围:Y为10%～50%;Bi、Sb都为15%～25%,主晶相化学组成为Y1.5Sb0.5O3.5。The reference voltage gradient, energy absorption capability and voltage ratio （U5kA/U1mA） of the ZnO-Bi2O3-based varistor doped with deferent content of Y2O3 were studied. With increase of content of the Y2O3, the reference voltage gradient raised consistently （367 V/mm in the highest）, and energy absorption capability and voltage ratio reached to the maximum （1.65 and 246J/cm^3 respectively） while the content of the Y2O3 was within 0.3%-0.7%. Based on the result of the microstructrul analyze, the above-mentioned electrical performance in microstructrul aspect was deduced form change of the Y-contained phase amount and distribution. Through the ESD and XRD analyze, the range of content of the compose（Y： 10%-50%; Bi, Sb： 15%-25%） and the major phase（Y1.5Sb0.5O3.5） of the Y-contained phase was determined.

关 键 词：ZNO电阻片 不同氧化钇含量 电性能 微观结构 含钇晶间相 

分 类 号：TM862[电气工程—高电压与绝缘技术]