弛豫铁电单晶(PMNT)中负离子配位多面体结晶方位与工程化畴  

Crystalline Orientation and Engineered Domain of Anionic Coordination-polyhedron in Relaxor Ferroelectric Single Crystals(PMNT)

作　　者：仲维卓[1] 赫崇君[1] 张学华[1] 罗豪甦[1] 华素坤[1] 

机构地区：[1]中国科学院上海硅酸盐研究所,上海201800

出　　处：《人工晶体学报》2006年第6期1163-1166,共4页Journal of Synthetic Crystals

基　　金：国家自然科学基金(No.50432030;50331040);上海市科委基金(No.05JC14079)

摘　　要：本文从晶体中负离子配位多面体结构基元结晶方位及其形变的论点讨论了PMNT晶体工程化畴的形成机理,认为晶体工程化畴的形成是在电场作用下,当A位离子沿着晶体a、b、c轴孔道发生位移导致B八面体中的B离子位移和B八面体形变,两者相互制约所致,三方和四方晶系的晶体中畴的形成都是沿着B八面体的对角线方向分布。The formation mechanism of engineered domain in PMNT crystals is discussed in terms of the orientation and distortion of anionic coordination-polyhedron units. Engineered domain is induced by the B-ion displacement and deformation of B octahedron, when the A-site ions displace along a, b and c tunnels under E-field. The domains in rhombohedral and tetragonal lattice distribute along the diagonal direction of B octahedrons.

关 键 词：负离子配位多面 工程化畴 PMNT 结晶方位 

分 类 号：O78[理学—晶体学]