甲酸根离子掺杂的卤化银中空穴陷阱效应分析  

Study of Hole-trap Effect in Silver Halide Doped with Formate Ions

作　　者：李庆[1] 范闪闪[1] 李春雷[1] 周娴[1] 杨少鹏[1] 李晓苇[1] 江晓利[1] 田晓东[1] 傅广生[1] 

机构地区：[1]河北大学物理科学与技术学院,保定071002

出　　处：《人工晶体学报》2006年第6期1227-1231,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金(No.60478033);河北省科学技术研究计划(No.05215102)资助

摘　　要：本文采用微波吸收介电谱检测技术,系统研究了甲酸根离子掺杂的立方体卤化银乳剂在35ps脉冲激光作用下所产生的光电子衰减行为,分析了甲酸根离子的空穴陷阱效应以及光电子衰减特性与掺杂条件的关系。通过分析不同位置和浓度甲酸根离子掺杂的立方体AgB r乳剂中光电子衰减时间特性,讨论了AgB r乳剂中甲酸根离子掺杂条件的变化对光电子衰减的影响,揭示了其空穴陷阱效应的作用机理。实验结果表明:不同浓度的甲酸根离子对立方体AgB r乳剂都有增感作用,最佳掺杂浓度为10-3mol/molAg;最佳掺杂位置是90%,说明了在接近微晶表面掺杂的空穴陷阱对提高乳剂感光度有较好的作用。The temporal behavior of photoelectrons generated by 35ps laser pulses in cubic silver halide emulsion doped with formate ions has been measured with the microwave absorption and dielectric spectrum detection technique. The hole-trap effect of formate ions and the relationship between photoelectron decay characteristics and doping conditions were discussed. Based on the time-resolved spectra of photoelectrons in cubic AgBr emulsion doped with formate ions, the influence of different doping conditions on photoelectron decay was analyzed, and revealed the mechanism of hole-trap effect. It is found that different quantities of formate ions doping the cubic AgBr grains can sensitize the grains with the best doping quantities of 10^-3 mol/molAg, and the best doping position is 90%, which indicates doping near the surface of cubic AgBr grains has better effect for sensitization.

关 键 词：空穴陷阱 甲酸根离子 微波吸收 光电子衰减特性 

分 类 号：TQ174[化学工程—陶瓷工业]