MOSFET的热载流子损伤及其退火  

MOSFET′s Damage Induced by Hot Carrier Injection and Its Annealing

作　　者：余学峰[1] 艾尔肯[1] 任迪远[1] 张国强[1] 陆妩[1] 郭旗[1] 

机构地区：[1]中科院新疆理化技术研究所,乌鲁木齐830011

出　　处：《固体电子学研究与进展》2006年第4期560-563,共4页Research & Progress of SSE

摘　　要：对国内常规54HC工艺制作的PMOSFET进行了F-N热载流子注入损伤实验,研究了MOSFET跨导、阈电压等参数随热载流子注入的退化规律,特别是从微观氧化物电荷和界面态变化对阈电压影响角度,对国内外较少见报道的MOSFET热载流子损伤在室温和高温(100°C)下的退火特性进行了研究,并从该角度探讨了MOSFET热载流子注入产生氧化物电荷和界面态的特性。Responses of MOSFET＇s transeonductanee and threshold voltage to the hot-carrier injection have been studied. The annealing characteristics of hot-carrier injecting induced damage also has been investigated, and from this view, the generation of the oxide charges and interface states have been discussed.

关 键 词：金属氧化物半导体场效应晶体管 热载流子 损伤 退火 

分 类 号：TN386.1[电子电信—物理电子学]