杂质原子在面心立方晶体中诱发的成对挛晶  

The coupled twins induced by impurity atom in FCC crystal

作　　者：董光明[1] 孙国雄[1] 廖恒成[1] 韩正铜[2] 

机构地区：[1]东南大学材料科学与工程学院,江苏南京210018 [2]中国矿业大学机电工程学院,江苏徐州221008

出　　处：《材料科学与工艺》2006年第6期585-587,591,共4页Materials Science and Technology

基　　金：江苏省自然科学基金资助项目(BK2004069)

摘　　要：为研究杂质原子在面心立方晶体内诱发的孪晶,采用刚性球模型进行计算研究。计算结果表明,当杂质元素的原子半径与晶体的原子半径之比约为1.65时,如果杂质原子吸附在面心立方晶体的{111}晶面上时,将可能在该{111}面上的某个[112]晶向上及与该{111}面的该[112]晶向成109.5°的另一个{111}面上的某个[112]方向上同时诱发挛晶,即诱发成对的挛晶,而不是仅仅在原来的{111}晶面上诱发一处孪晶.杂质原子诱发成对孪晶及单孪晶的的可能性各为50%.The twin induced by impurity atom in the FCC crystal was studied by calculation based on the hard sphere model. It is found by calculation that when the atomic radius ratio of the impurity to that of the matrix crystal is about 1.65, and the impurity atom is absorbed on the { 111 } plane of the FCC crystal, the impurity atom will probably induce not only one twin in a [ 112] crystallographic direction on this {111}plane, but also the second twin in another [112] crystallographic direction on another {lll } plane with an angle of 109. 5° to the first [ 112 ] crystallographic direction. Namely, the coupled twins will be induced by one impurity atom. Both of the formation possibility of the coupled twins and single twin induced by impurity atom are 50%.

关 键 词：成对的挛晶 面心立方 杂质原子 共晶硅 变质 

分 类 号：TG132[一般工业技术—材料科学与工程]