电偶腐蚀法制备多孔硅的研究  

Study of Porous Silicon Prepared by Galvanic Corrosion Method

作　　者：房振乾[1] 胡明[1] 窦雁巍[1] 宗杨[1] 梁继然[1] 

机构地区：[1]天津大学电子信息工程学院,天津300072

出　　处：《材料工程》2006年第11期45-48,52,共5页Journal of Materials Engineering

基　　金：国家自然科学基金资助项目(60371030;60071027);天津市自然科学基金项目(023603811)

摘　　要：用电偶腐蚀法制备多孔硅,主要研究了铂电极的优化制备工艺以及腐蚀条件对多孔硅厚度的影响,并且结合SEM,AFM等测试手段对所制备的多孔硅的表面形貌进行了分析。实验发现,在相同的腐蚀条件下,多孔硅的厚度随铂电极的厚度以及铂电极与腐蚀硅片的面积比的增大而增大。Porous silicon was prepared by using the galvanic corrosion method. The optimal process of Pt electrode and the effects of etching conditions on the thickness of porous silicon were studied. The surface morphologies of porous silicon were investigated in terms of scanning electron microscope （SEM） and atom force microscope （AFM）. The results showed that the thickness of the porous silicon layer will augment with the accretion of the thickness of Pt electrode and the area ratio of Pt electrode to etching silicon substrate in the same etching conditions.

关 键 词：多孔硅 电偶腐蚀法 腐蚀条件 厚度 表面形貌 

分 类 号：TN402[电子电信—微电子学与固体电子学]