Al-Induced Crystallization Growth of Si Films by Inductively Coupled Plasma Chemical Vapour Deposition  

作　　者：栗军帅 王金晓 尹旻 高平奇 贺德衍 

机构地区：[1]Department of Physics, Lanzhou University, Lanzhou 730000

出　　处：《Chinese Physics Letters》2006年第12期3338-3340,共3页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 10175030, and the Natural Science Foundation of Gansu Province under Grant No 4WS035-A72-134.

摘　　要：Polycrystalline Si （poly-Si） films are in situ grown on Al-coated glass substrates by inductively coupled plasma chemical vapour deposition at a temperature as low as 350℃. Compared to the traditional annealing crystalliza- tion of amorphous Si/Al-layer structures, no layer exchange is observed and the resultant poly-Si film is much thicker than Al layer. By analysing the depth profiles of the elemental composition, no remains of A1 atoms are detected in Si layer within the limit （〈0.01 at.%） of the used evaluations. It is indicated that the poly-Si material obtained by Al-induced crystallization growth has more potential applications than that prepared by annealing the amorphous Si/Al-layer structures.Polycrystalline Si （poly-Si） films are in situ grown on Al-coated glass substrates by inductively coupled plasma chemical vapour deposition at a temperature as low as 350℃. Compared to the traditional annealing crystalliza- tion of amorphous Si/Al-layer structures, no layer exchange is observed and the resultant poly-Si film is much thicker than Al layer. By analysing the depth profiles of the elemental composition, no remains of A1 atoms are detected in Si layer within the limit （〈0.01 at.%） of the used evaluations. It is indicated that the poly-Si material obtained by Al-induced crystallization growth has more potential applications than that prepared by annealing the amorphous Si/Al-layer structures.

关 键 词：SILICON THIN-FILMS ALUMINUM-INDUCED CRYSTALLIZATION HYDROGENATEDAMORPHOUS-SILICON SOLAR-CELLS TEMPERATURE 

分 类 号：O782.9[理学—晶体学]