Micro-Photoluminescence Confocal Mapping of Single V-Grooved GaAs Quantum Wire  

作　　者：黄少华 陈张海 柏利慧 沈学础 H. H. Tan L. Fu M. Fraser C. Jagadish 

机构地区：[1]Department of Physics and National Key Laboratory for Surface Physics, Fudan University, Shanghai 200433 [2]Department of Electronic Material Engineering, Research School of Ph3~sical Science and Engineering, Australian National University, Canberra, ACT 0200, Australia

出　　处：《Chinese Physics Letters》2006年第12期3341-3344,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 10374018, 10321003 and 90401015, the Scientific Committee of Shanghai under Grant No 03DJ14001, and the Special Funds for Major Basis State Research Project of China under Grant No 2004CB619004.

摘　　要：We perform the micro-photoluminescence measurement at low temperatures and a scanning optical mapping with high spatial resolution of a single V-grooved GaAs quantum wire modified by the selective ion-implantation and rapid thermally annealing. While the mapping shows the luminescences respectively from the quantum wires and from quantum well areas between quantum wires in general, the micro-photoluminescence at liquid He temperatures reveals a plenty of spectral structures of the PL band for a single quantum wire. The spectral structures are attributed to the inhomogeneity and non-uniformity of both the space structure and compositions of real wires as well as the defects nearby the interface between quantum wire and surrounding quantum well structures. All these make the excitons farther localized in quasi-zero-dimensional quantum potential boxes related to these non-uniformity and/or defects. The results also demonstrate the ability of micro-photoluminescence measurement and mapping for the characterization of both opto-electronic and structural properties of real quantum wires.We perform the micro-photoluminescence measurement at low temperatures and a scanning optical mapping with high spatial resolution of a single V-grooved GaAs quantum wire modified by the selective ion-implantation and rapid thermally annealing. While the mapping shows the luminescences respectively from the quantum wires and from quantum well areas between quantum wires in general, the micro-photoluminescence at liquid He temperatures reveals a plenty of spectral structures of the PL band for a single quantum wire. The spectral structures are attributed to the inhomogeneity and non-uniformity of both the space structure and compositions of real wires as well as the defects nearby the interface between quantum wire and surrounding quantum well structures. All these make the excitons farther localized in quasi-zero-dimensional quantum potential boxes related to these non-uniformity and/or defects. The results also demonstrate the ability of micro-photoluminescence measurement and mapping for the characterization of both opto-electronic and structural properties of real quantum wires.

关 键 词：GROWTH 

分 类 号：O734[理学—晶体学] TN201[电子电信—物理电子学]