Electrical and Optical Properties of Bulk ZnO Single Crystal Grown by Flux Bridgman Method  

作　　者：李新华 徐家跃 金敏 申慧 李效民 

机构地区：[1]Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 [2]Graduate School of the Chinese Academy of Sciences, Beijing 100049

出　　处：《Chinese Physics Letters》2006年第12期3356-3358,共3页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 50372076.

摘　　要：Zinc oxide （ZnO） single crystals are grown by the modified vertical Bridgman method using a PbF2 flux. The maximum size of the as-grown ZnO crystal is about Φ25 mm×5mm. The transmittance of the as-grown ZnO crystal is more than 70% in the range of 600-800hm and the optical band gap is estimated to be 3.21eV. The photoluminescence spectrum indicates that the as-grown ZnO crystal has a very low concentration of native defects and is much closed to its stoichiometry. The electrical measurement exhibits that the ZnO crystal has low electrical resistivity of 0.02394Ωcm^-1 and a high carrier concentration of 2.10×10^18cm^-3.Zinc oxide （ZnO） single crystals are grown by the modified vertical Bridgman method using a PbF2 flux. The maximum size of the as-grown ZnO crystal is about Φ25 mm×5mm. The transmittance of the as-grown ZnO crystal is more than 70% in the range of 600-800hm and the optical band gap is estimated to be 3.21eV. The photoluminescence spectrum indicates that the as-grown ZnO crystal has a very low concentration of native defects and is much closed to its stoichiometry. The electrical measurement exhibits that the ZnO crystal has low electrical resistivity of 0.02394Ωcm^-1 and a high carrier concentration of 2.10×10^18cm^-3.

关 键 词：HYDROTHERMAL METHOD FILMS 

分 类 号：O738[理学—晶体学] O734