镓掺杂碳纳米管场发射性能的研究  

Field Emission Properties of Gallium-doped Carbon Nanotubes

作　　者：柳堃[1] 李华洋[1] 李强[1] 梁二军[1] 

机构地区：[1]郑州大学物理工程学院材料物理教育部重点实验室,河南郑州450052

出　　处：《河南大学学报（自然科学版）》2006年第4期24-27,共4页Journal of Henan University:Natural Science

基　　金：河南省高校创新人才基金资助项目(1999-125)

摘　　要：采用催化热解方法制备出镓掺杂碳纳米管，并利用丝网印刷工艺将其制备成纳米管薄膜，扫描电子显微镜观察表明，纳米管直径在20～50nm之间．对此薄膜进行低场致电子发射测试表明，其场发射性能优于同样条件下未掺杂时的碳纳米管、碳氮纳米管和硼碳氮纳米管．当外加电场为1．1V／μm，发射电流密度为50μA／cm^2;当外电场增加到2．6v／μm时。发射电子密度达到5000μA／cm^2．对其场发射机理进行探讨.Gallium-doped carbon nanotubes were synthesized by pyrolysis and purified. Thin films of the purified samples were fabricated by a screen-printing method. TEM observation shows that the tubes range 20-50 nm in diameter. Field emission properties of these films were studied. It was shown that the turn-on field was less than 1. 0 V/μm, and the current densities reached 50 and 5 000μA/cm^2 at applied fields 1.1 and 2.6 V/μm, respectively. The electron field emission properties of the gallium-doped nanotubes were much better than those of carbon nanotubes, CN and BCN nanotubes. Mechanisms of field emission of gallium-doped nanotubes were explained.

关 键 词：碳纳米管 镓掺杂 场发射 

分 类 号：TB383[一般工业技术—材料科学与工程] O643.35[理学—物理化学]