Electrical Properties of Plasma Deposited Low-Dielectric-Constant Fluorinated Amorphous Carbon Films  

作　　者：吴振宇 杨银堂 汪家友 

机构地区：[1]Key Lab of Ministry of Education for Band-Gap Semiconductor Materials and Devices,Institute of Microelectronics,Xidian University,Xi'an 710071,China

出　　处：《Plasma Science and Technology》2006年第6期724-726,共3页等离子体科学和技术（英文版）

基　　金：supported by the Key Laboratory Foundation of Electron Devices Reliability Physics and Applications(No.51433020205DZ01);the Xi'an Applied Materials Innovation Fund(No.XA-AM-200501)

摘　　要：Fluorinated amorphous carbon （a-C：F） films were deposited at room temperature using C4Fs and CH4 as precursor gases by electron cyclotron resonance chemical vapour deposition （ECR-CVD）. Chemical structures were analysed using X-ray photoelectron spectroscopy （XPS）. The current conduction shows ohmic behaviour and the leakage current increases with the content of C sp2 in the deposited a-C：F films at a low electric field. The behaviour of the leakage current is well e^plained by the Poole-Frankel mechanism at a high electric field. The interface traps, rather than chemical structures, of a-C：F films determine the PF emission current.Fluorinated amorphous carbon （a-C：F） films were deposited at room temperature using C4Fs and CH4 as precursor gases by electron cyclotron resonance chemical vapour deposition （ECR-CVD）. Chemical structures were analysed using X-ray photoelectron spectroscopy （XPS）. The current conduction shows ohmic behaviour and the leakage current increases with the content of C sp2 in the deposited a-C：F films at a low electric field. The behaviour of the leakage current is well e^plained by the Poole-Frankel mechanism at a high electric field. The interface traps, rather than chemical structures, of a-C：F films determine the PF emission current.

关 键 词：electrical properties conduction behaviour chemical vapour deposition a-C：F 

分 类 号：O53[理学—等离子体物理]