InP衬底上电容和电阻的建模  

Modeling of InP-Based Capacitors and Resistors

作　　者：何丹[1] 孙玲玲[1] 

机构地区：[1]杭州电子科技大学CAD所,浙江杭州310018

出　　处：《杭州电子科技大学学报（自然科学版）》2006年第5期5-8,共4页Journal of Hangzhou Dianzi University：Natural Sciences

基　　金：国家自然科学基金资助项目(90207007)

摘　　要：在射频集成电路中,InP衬底的高电阻率导致了低衬底损耗以及器件和电路性能的提高。该文提出了InP衬底上MIM电容和电阻的简单而精确的等效电路模型。测量结果与等效电路的仿真结果拟合得非常好,从而证明该文提出的模型足以准确地描述InP衬底上MIM电容和电阻的电磁场特性。另外,InP和GaAs同属于III-IV族化合物,它们具有相似的性质,因此,该文提出的模型同样适用于GaAs衬底上的电容和电阻。In RFIC, the high resistivity of InP substrate results in low substrate loss and the improvement of devices and circuits＇ performance. Simple and accurate equivalent circuit models for InP - based MIM capacitor and resistor have been developed in this paper. Excellent agreement is achieved between measured and simulated data. It proves that the proposed models are accurate enough to describe the electromagnetic characteristics of InP- based MIM - pacitors and resistors. InP and GaAs belong to Ⅲ-Ⅳ group semiconductor compound and they have similar properties, so the models proposed by this paper are fit for GaAs - based MIM capacitors and resistors.

关 键 词：射频 高电阻率 寄生效应 

分 类 号：TN401[电子电信—微电子学与固体电子学]