不同硫压下Fe_3O_4合成FeS_2薄膜的结构及光吸收  

Microstructure and optical absorption of FeS_2 films prepared by sulfurizing Fe_3O_4 at different pressures

作　　者：侯玲[1] 刘艳辉[1] 孟亮 

机构地区：[1]浙江大学金属材料研究所,浙江杭州310027

出　　处：《浙江大学学报（工学版）》2006年第12期2037-2040,共4页Journal of Zhejiang University：Engineering Science

基　　金：浙江省自然科学基金资助项目(Y405016)

摘　　要：为了提高FeS2薄膜的性能，研究了硫化压力对FeS2薄膜组织结构和光吸收性能的影响规律．采用恒流电沉积及氧化处理制备Fe3O4先驱体薄膜，再通过400℃下的热硫化退火，使Fe3O4先驱体薄膜在不同硫压下转变成为多晶FeS2薄膜．研究结果表明，在5～80kPa的不同硫化压力下，Fe3O4薄膜均能够转变为FeS2薄膜．随硫化压力增大，FeS2薄膜的晶粒尺寸和禁带宽度略有减小．较低的硫化压力易导致FeS2薄膜结晶不充分，较高的硫化压力易导致基底膜层同时被硫化．硫化压力的变化导致相变微观应力、点缺陷数量及面缺陷比例的变化，进而导致FeS2薄膜光吸收性能的变化．To improve the properties of FeS2 thin films, the influence of sulfurizing pressure on the microstructure and optical absorption characteristics of the FeS2 films was investigated. The precursive Fe3 O4 films were sulfurized using constant current electr.odepositing and oxidation treating, and Fe3O4 films was transformed into FeS2 thin films after heat sulfur annealing of 400 ℃ at different sulfur/zing pressures. Research results indicate that the Fe3O4 films sulfurized at 5～80 kPa can be changed into FeS2 films. The crystallite size and forbidden band extent of the FeS2 films slightly decrease with the increasing sulfurizing pressure. Low sulfurizing pressure results in insufficient growth of the FeS2 grains, while high sulfurizing pressure results in unexpected sulfurizing reaction in the substrate film. Different sulfurizing pressures can result in microstrain variations of phase transformation, spot-defect quantity and surface-defect quantity, and then can result in the change of optical absorption properties in the FeS2 films.

关 键 词：FeS2 薄膜 硫化压力 晶体结构 光吸收 

分 类 号：TN304.05[电子电信—物理电子学]