铅阳极膜的半导体性能  

Semiconductor properties of anodic film formed on lead

作　　者：李党国[1] 周根树[1] 张娟[1] 郑茂盛[1] 

机构地区：[1]西安交通大学金属材料强度国家重点实验室,西安710049

出　　处：《中国有色金属学报》2006年第11期1918-1923,共6页The Chinese Journal of Nonferrous Metals

基　　金：科技部中小企业创新基金资助项目(03C26216111166)

摘　　要：利用微分电容法结合Mott-Schottky理论研究铅电极1.28V(vsSCE)下硫酸溶液中所形成阳极腐蚀膜的半导体性质,同时对测试频率、成膜时间及成膜溶液pH值等影响膜半导体性能的因素也做了分析。结果表明:铅阳极膜具有n型半导体特性,施主密度ND随测试频率的增加而减小,随极化时间的延长而增加,随溶液pH值的增加而减小。溶液pH值的改变可以显著影响膜的平带电位EFB,两者间呈线性关系,拟和斜率为60.43。The semi-conductive properties of the anodic film formed on lead electrode at 1.28 V （vs SCE） in sulfuric acid solution were investigated by differential capacitance measurement and Mott-Schottky analysis. In addition, the factors affecting the semi-conductive property of anodic film, such as measured frequency, formation time and pH value of the solution, were analyzed. The results show that the anodic film shows an n-type semi-conductive character, the donor density （ND） decreases with the measurement frequency increasing, increases with the polarization time prolonging and decreases with pH value increasing. The flat-band potential （ψFB） is significantly influenced by the pH value of the solution, they have a linear relationship with a slope of 60.43.

关 键 词：阳极膜 微分电容法 施主密度 平带电位 

分 类 号：TG146.6[一般工业技术—材料科学与工程]