TWO STEPS CHEMICAL-MECHANICAL POLISHING OF RIGID DISK SUBSTRATE TO GET ATOM-SCALE PLANARIZATION SURFACE  

作　　者：LEI Hong LUO Jianbin LU Xinchun 

机构地区：[1]Research Centre of Nanoscience and Nanotechnology, Shanghai University, Shanghai 200436, China [2]State Key Laboratory of Tribology, Tslnghua University, Beijing 100084, China

出　　处：《Chinese Journal of Mechanical Engineering》2006年第4期496-499,共4页中国机械工程学报（英文版）

基　　金：This project is supported by National Basic Research Program of China (973 Program, N0.2003CB716201)National Natural Science Foundation of China (No.50575131)Science Foundation of Shanghai Municipal Commission of Science and Technology, China(No.0452nm013).

摘　　要：In order to get atomic smooth rigid disk substrate surface, ultra-fined alumina slurry and nanometer silica slurry are prepared, and two steps chemical-mechanical polishing （CMP） of rigid disk substrate in the two slurries are studied. The results show that, during the first step CMP in the alumina slurry, a high material removal rate is reached, and the average roughness （Ra） and the average waviness （Wa） of the polished surfaces can be decreased from previous 1.4 nm and 1.6 nm to about 0.6 nm and 0.7 nm, respectively. By using the nanometer silica slurry and optimized polishing process parameters in the second step CMP, the Ra and the Wa of the polished surfaces can be further reduced to 0.038 nm and 0.06 am, respectively. Atom force microscopy （AFM） analysis shows that the final polished surfaces are ultra-smooth without micro-defects.In order to get atomic smooth rigid disk substrate surface, ultra-fined alumina slurry and nanometer silica slurry are prepared, and two steps chemical-mechanical polishing （CMP） of rigid disk substrate in the two slurries are studied. The results show that, during the first step CMP in the alumina slurry, a high material removal rate is reached, and the average roughness （Ra） and the average waviness （Wa） of the polished surfaces can be decreased from previous 1.4 nm and 1.6 nm to about 0.6 nm and 0.7 nm, respectively. By using the nanometer silica slurry and optimized polishing process parameters in the second step CMP, the Ra and the Wa of the polished surfaces can be further reduced to 0.038 nm and 0.06 am, respectively. Atom force microscopy （AFM） analysis shows that the final polished surfaces are ultra-smooth without micro-defects.

关 键 词：TWo steps Chemical-mechanical polishing（CMP） Rigid disk substrateAtom-scale planarization Slurry 

分 类 号：TG175[金属学及工艺—金属表面处理]