MCVD工艺沉积温度对有源光纤掺杂浓度的影响研究  

Study of the influence of the deposition temperature by using the MCVD technique on the rare earth ion concentration of active fiber

作　　者：衣永青[1] 田海生[1] 宁鼎[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《光通信技术》2007年第1期60-61,共2页Optical Communication Technology

基　　金：天津科技预研基金项目(043602311)资助

摘　　要：以掺镱双包层光纤为例,主要介绍了用MCVD工艺及溶液掺杂法制备掺稀土离子有源光纤,通过对低温沉积疏松芯层时温度控制对最终研制的有源光纤镱离子掺杂浓度的影响研究,得出沉积温度对有源光纤掺杂浓度影响的规律,为目前国内普遍采用的MCVD工艺结合溶液掺杂技术制备掺稀土离子有源光纤提供了参考。We use the double-cladding Ytterbium doped fiber as example to introduce the fabrication of rare earth ion doped fiber by using the method of a combination of the MCVD and solution doping technique primary in this paper. After studying the influence of the porous flit core＇s deposition process temperature control on the concentration of Ytterbium ion, we get the relationship between deposition temperature and concentration of the dopant ion. So the reference for fabrication of rare ion doped fiber, which is usually used by using the method of a combination of the MCVD and solution doping technique, is given.

关 键 词：MCVD 有源光纤 稀土掺杂 

分 类 号：TN929.11[电子电信—通信与信息系统]