磁控溅射制备TiO_2光催化薄膜工艺条件的优化  

Optimization of technological parameters of photocatalytic TiO_2 film by magnetron sputtering

作　　者：常铁军[1] 武秀芳[1] 孙杰[1] 孙艳[1] 

机构地区：[1]哈尔滨工程大学材料科学与化学工程学院,黑龙江哈尔滨150001

出　　处：《应用科技》2007年第1期66-68,72,共4页Applied Science and Technology

摘　　要：采用正交实验设计法优化了玻璃基片表面磁控溅射制备TiO2光催化活性薄膜的工艺条件,以罗丹明B的降解率作为薄膜光催化性的评价标准.结果表明:所考察的因素对薄膜光催化性能的影响次序是靶基距>基片温度>溅射气压>溅射功率>氧氩比和靶基距的交互作用>氧氩比;所得优化条件为:功率155 W,靶基距85 mm,气压1.2 Pa,氧氩比1∶10,基片温度550℃.Technological parameters of photOcatalytic Ti02 thin film by magnetron sputtering was optimized with orthogonal experimental method. Photocatalytic activity of TiO2 thin film was evaluated by degradation rate of Rhodamine. The results show the influence sequence of technological parameters studied to TiO2 thin film is substrate-to-target distance, substrate temperature, sputtering pressure , sputtering power, the interaction between oxygen argon ratio and substrate-to-target distance, oxygen argon ratio. The best conditions obtained are that sputtering power is 155 W, substrate-to-target distance is 85 mm, sputtering pressure is 1.2 Pa, oxygen argon ratio is 1 ： 10 and substrate temperature is 550° .

关 键 词：正交试验 玻璃基片磁控溅射 TIO2薄膜 光催化性能 

分 类 号：O643.36[理学—物理化学]